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Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thick Films Fabricated by Screen-printing Method
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  • Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thick Films Fabricated by Screen-printing Method
  • Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thick Films Fabricated by Screen-printing Method
저자명
Lee. Sung-Gap,Lee. Young-Hie
간행물명
Transactions on electrical and electronic materials
권/호정보
2006년|7권 3호|pp.129-133 (5 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{circ}C$ were $14.15{mu}C/cm^2$ and 19.13 kV/cm, respectively.