The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${Delta}n$), where ${Delta}$n is the refractive index of chalcogenide thin film (${Delta}n=2.0$). The ${eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.