We obtained in-situ $MgB_2$ thin films in an one-step process using ESSD (Evaporation Sputtering Simultaneous Deposition) method. In our approach. the Ma evaporator is designed specially Mg and B are simultaneously evaporated and sputtered, respectively, in the specially designed ESSD chamber. The background pressure was less than $1{ imes}10^{-6}$ Torr. The substrate temperature was kept at 623 K. The film properties were investigated by both electrical resistivity and PPMS. As a result, typical $T_c$ of films was 11 K.