The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{ imes}10^{-2}{Omega}{cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{circ}C$ are enhanced up to $5{ imes}10^{-4}{Omega}{cdot}cm$ and 85%, respectively.