The $La_{0.7}Sr_{0.3}MnO_3$ was deposited on $SiO_2/Si$ substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was $350^{circ}C$. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.