In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{circ}C$. The resistivity was $1.5{ imes}10^{11};{Omega}{cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{circ}C$ to -29.8 at $500^{circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.