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Phase-Locked Loop with Leakage and Power/Ground Noise Compensation in 32nm Technology
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  • Phase-Locked Loop with Leakage and Power/Ground Noise Compensation in 32nm Technology
  • Phase-Locked Loop with Leakage and Power/Ground Noise Compensation in 32nm Technology
저자명
Kim. Kyung-Ki,Kim. Yong-Bin,Lee. Young-Jun
간행물명
Journal of semiconductor technology and science
권/호정보
2007년|7권 4호|pp.241-246 (6 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9 V power supply voltage. The simulation results show that the proposed PLL achieves 88% jitter reduction at 440 MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of 40 $M{sim}725$ MHz with a multiplication range of 1-1023, and the RMS and peak-to-peak jitter are 5psec and 42.7 psec, respectively.