An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{sim}470;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+};and;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${lambda}_{cm}=450;nm$) and a blend of two phosphors ($Mg^{2+},;Ba^{2+};co-doped;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},;Ba^{2+};co-doped;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},;Ba^{2+};co-doped;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},;Ba^{2+};co-doped;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).