- SCBF 장치에서 이온전류에 대한 포텐셜 우물 구조의 영향
- ㆍ 저자명
- 주흥진,박정호,고광철,Ju. Heung-Jin,Park. Jeong-Ho,Ko. Kwang-Cheol
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2007년|20권 5호|pp.471-477 (7 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.