[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{circ}C$ material can be conveniently described by non-molecularity$({Delta}x=[Cu/In]-1)$ and non-stoichiometry $({Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${Delta}y>0$ would behave as p-type material while ${Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{ imes}10^{17}cm^{-3},;312.502cm^2/V{cdot}s;and;2.36{ imes}10^{-2};{Omega}{cdot}cm$, respectively.