Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at $450^{circ}C$ by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of $3.0{ imes}10^{-4}{Omega};cm$, the highest carrier concentration of $2.404{ imes}10^{21}/cm^3$, and about $8;cm^2/V{cdot}sec$ of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of $Sn^{4+}-O$ bonding are the highest at 1.765 of F/Sn molar ratio.