The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{circ}C$. An undoped ZnO thin film was also fabricated at $150^{circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{circ}C$ revealed the highest hole concentration of $3.98{ imes}1019;cm^{-3}$ and a resistivity of $0.347;{Omega}{cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{circ}C$ and annealed at $350^{circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.