The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was $0.074^{T-1}$, $0.16^{T-1}$ and $0.77^{T-1}$, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is $0.24^{T-1}$, which is larger than the value of $0.16^{T-1}$ reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.