Hydrogenated microcrystalline silicon(${mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3;and;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{ imes}10^{-3}$, dark conductivity has a maximum value of ${sim}18.5S/cm$ and optical bandgap also a maximum value of ${sim}2.39eV$. Boron-doped ${mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${sim}10^{-2};of;B_2H_6/SiH_4$.