The effects of electrolytes and additives on the electropolishing of 50 and $20{mu}m$ diameter copper via were investigated to flatten 3D SiP through via. The termination time was determined with analysis of applied potential on anode and cathode to avoid excess electropolishing. Acetic acid played a role of accelerator and glycerol played a role of inhibitor in phosphoric acid electrolytes. The overplated copper on the through via was effectively electropolished in the phosphoric electrolytes with acetic acid and glycerol addition. The electropolishing was terminated at the point of abrupt change of applied potential to remove only overplated copper on the through via.