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Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water
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  • Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water
  • Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water
저자명
Yi. Jae-Hwan,Lee. Seung-Ho,Kim. Tae-Gon,Lee. Gun-Ho,Choi. Eun-Suck,Park. Jin-Goo
간행물명
한국재료학회지
권/호정보
2008년|18권 6호|pp.307-312 (6 pages)
발행정보
한국재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200;{AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000;{AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.