$Pb(ZrTi)O_3$ thin films were prepared on transparent conducting oxides, through sol-gel processing. The processing variables such as spin velocity, spin time and annealing temperature were investigated using a statistical design of experiments. Dielectric properties were determined through capacitance-voltage measurements and electrical characterizations evaluated using current-voltage characteristics. The leakage currents is determined mainly by annealing. The capacitance and breakdown voltage is found to be independent of the processing variables. The sophisticatedly controlled PZT thin films have been confirmed through microscopic images.