An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${sim}4{mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${sim}0.5{Omega}$ and via inductance value measured was $sim$83 pH.