- Post-CMP Cleaning에서 PVA 브러시 오염이 세정 효율에 미치는 영향
- ㆍ 저자명
- 조한철,유민종,김석주,정해도,Cho. Han-Chul,Yuh. Min-Jong,Kim. Suk-Joo,Jeong. Hae-Do
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2009년|22권 2호|pp.114-118 (5 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.