- 1.3μm 분포 괴환형 레이저 다이오드의 무반사 설계 및 특성
- ㆍ 저자명
- 기현철,김선훈,홍경진,김회종,Ki. Hyun-Chul,Kim. Seon-Hoon,Hong. Kyung-Jin,Kim. Hwe-Jong
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2009년|22권 3호|pp.248-251 (4 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{circ}(Horizontal){ imes}24.4^{circ}$ (Vertical), 1313.8 nm, respectively.