The $eta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $eta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a;=;0.617;{AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $eta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8;{ imes};10^{-2};{Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.