The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{ imes}10^{-4}{Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{ imes}10^{-4}{Omega}cm$ as-annealed at $300^{circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.