The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $AA$ to 50 $AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $AA$ tunnel oxide specimen, and the 50 $AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{circ}C$ showed superior memory characteristics compared to the sample with $750^{circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.