We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{ imes}10^{-5}$ cm respectively.