In this study, we investigated the optical, electrical, and structural properties of the IGZO($In_2O_3:Ga_2O_3:ZnO$=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at $100^{circ}C$ substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity($1.35{ imes}10^{-3};Omega{cdot}cm$), high carrier concentration($6.62{ imes}10^{20} cm^{-3}$) and mobility($80.1 cm^2$/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at $100^{circ}C$ can be applied for improving optical, electrical and structural properties.