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Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si
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  • Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si
  • Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si
저자명
Kim. Do-Kyung,Bae. Jung-Hyeon,Kim. Hyun-Jae,Kang. Myung-Koo
간행물명
Transactions on electrical and electronic materials
권/호정보
2010년|11권 5호|pp.234-237 (4 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.