Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{circ}C$. From AFM, it was known that the thin film grown at $400^{circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.