The $Sr_{0.7}Bi_{2.3}Nb_2O_9$ thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800$[^{circ}C$]. The surface rougness showed about 0.42[nm] in annealed thin film at $650[^{circ}C$]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above $700[^{circ}C$]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~＋10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at $750[^{circ}C$] showed a fatigue-free characteristics up to $1.0 imes10^8$ cycles.