Photoluminescence properties and surface morphologies of porous silicon etched with various applied current densities at fixed etching times. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA exhibited very bright red photoluminescence properties. As the applied current densities increased, the photoluminescence efficiencies of porous silicon prepared at applied current densities above 300 mA decreased, and displayed the cracked surface on porous silicon. This cracked surface start to collapsed to give cracked domains.