The enhancement of quantum efficiency using a surface modified Ag anode in top-emitting organic light emitting diodes (TEOLEDs) is reported. The operation voltage at the current density of $1;mA/cm^2$ of TEOLEDs decreased from 9.3 V to 4.3 V as the surface of anode coated with $CuO_x$ layer. The work function of these structures were quantitatively determined using synchrotron radiation photoemission spectroscopy. Secondary electron emission spectra revealed that the work function of the Ag/$CuO_x$ structure is higher by 0.6 eV than that of Ag. Thus, the $CuO_x$ structure acts as a role in reducing the hole injection barrier by about 0.6 eV, resulting in a decrease of the turn-on voltage of top-emitting light emitting diodes.