Reel-to-reel deposition of $Y_2O_3$ has been performed on Ni-5%W metal substrates using the RF-sputtering method. The epitaxial orientation of $Y_2O_3$ buffer layers to the base bi-axially textured substrate was well identified using ${ heta}-2{ heta}$, out-of-plane ($omega$), and in-plane ($phi$) scans in X-ray diffraction analysis. The optimization of $Y_2O_3$ seed layers in reel-to-reel fashion were investigated varying the deposition temperature, sputtering power, and pressure for its significant roles for the following buffer stacks and superconducting layers. $Y_2O_3$ were all grown epitaxially on bi-axially textured metal substrates at 380 watts and 5 mTorr in the temperature range of $600-740^{circ}C$ with higher $Y_2O_3$ (400) intensities at ${sim}710^{circ}C$. It was found that the $Deltaomega$ values were $1-2^{circ}$ lower but the $Deltaphi$ values were above $1^{circ}$ higher than that of Ni-W substrates. As the sputtering power increased from 340 to 380 watts, $Deltaomega$ and $Deltaphi$ values showed decreased tendency. Even in the small window of deposition pressure of 3-7 mTorr, the $Y_2O_3$ (400) intensities increased and $Deltaomega$ and $Deltaphi$ values were reduced as sputtering pressure increased.