The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $Deltaphi$ values of ${sim}8.9^{circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{sim}16;{AA}/sec$. During deposition, the change of oxygen partial pressure(${ ho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{circ}C$ with superior $Deltaphi$ and $Deltaomega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $Deltaphi$ value of $5.5^{circ}$, $Deltaomega$ value of $2^{circ}$ and Ra value of 2.2 nm.