- AlN 반도체와 Cu의 도핑 농도에 대한 자성
- ㆍ 저자명
- 강병섭,이행기,Kang. Byung-Sub,Lee. Haeng-Ki
- ㆍ 간행물명
- 반도체디스플레이기술학회지
- ㆍ 권/호정보
- 2010년|9권 3호|pp.1-4 (4 pages)
- ㆍ 발행정보
- 한국반도체디스플레이기술학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.