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A Study on the Uniformity Improvement of Residual Layer of a Large Area Nanoimprint Lithography
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  • A Study on the Uniformity Improvement of Residual Layer of a Large Area Nanoimprint Lithography
  • A Study on the Uniformity Improvement of Residual Layer of a Large Area Nanoimprint Lithography
저자명
Kim. Kug-Weon,Noorani. Rafigul I.,Kim. Nam-Woong
간행물명
반도체디스플레이기술학회지
권/호정보
2010년|9권 4호|pp.19-23 (5 pages)
발행정보
한국반도체디스플레이기술학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Nanoimprint lithography (NIL) is one of the most versatile and promising technology for micro/nano-patterning due to its simplicity, high throughput and low cost. Recently, one of the major trends of NIL is large-area patterning. Especially, the research of the application of NIL to TFT-LCD field has been increasing. Technical difficulties to keep the uniformity of the residual layer, however, become severer as the imprinting area increases. In this paper we performed a numerical study for a large area NIL (the $2^nd$ generation TFT-LCD glass substrate ($370{ imes}470$ mm)) by using finite element method. First, a simple model considering the surrounding wall was established in order to simulate effectively and reduce the computing time. Then, the volume of fluid (VOF) and grid deformation method were utilized to calculate the free surfaces of the resist flow based on an Eulerian grid system. From the simulation, the velocity fields and the imprinting pressure during the filling process in the NIL were analyzed, and the effect of the surrounding wall and the uniformity of residual layer were investigated.