In this paper, the $CuInSe_2$ thin film was prepared by using co-evaporation method in four different substrate temperatures $100^{circ}C$, $200^{circ}C$, $300^{circ}C$ and $400^{circ}C$. When the substrate temperature was at $200^{circ}C$ and $300^{circ}C$, the single-phase $CuInSe_2$ was crystallized. As the temperature increased, it was shown that the thickness of the thin film was decreased with increment of the hall coefficient. When the sample was prepared at $200^{circ}C$ of the subsrate temperature, the values of band gap energy (Eg), sheet resister and resistivity were measured 0.99 eV, $89.82;{Omega}/{square}$ and $103{ imes}10^{-4};{Omega}{cdot}cm$, respectively.