This paper describes the interaction between operating parameters of target wafer surface. We use an organometallic (C) precursor gas in the focused ion beam deposition process. Under the beam intensity conditions (30kV), the influences of the on-target beam control parameters, such as dwell time, beam spacing, minimum frame time and scan type, were investigated by the deposition tests. The analysis was carried out with the variation of dimensions and shapes of the single pattern. The operating parameters considered in this research are implemented in the next double-patterning deposition. The test presented how their interaction appeared on the processing results. The analysis configured out the FIB induced deposition of single pattern with the variation of operating parameters. Additionally the result shows that the sequent beam job influenced the double-patterning deposition significantly. On-beam target conditions should be optimized for the target complicated shapes and high aspect-ratios.