Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${mu}m$ and a resistivity of 3 $Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.