A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{ imes}10^{-3}{Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.