Uniformity of plasma etching processes critically depends on the wafer temperature and its distribution. The wafer temperature is affected by plasma, chucking force, He back side pressure and the surface temperature of ESC(electrostatic chuck). In this work, 3D mathematical modeling is used to investigate the influence of the geometry of coolant path and the temperature distribution of the ESC surface. The model that has the coolant path with less change of the cross-sectional area and the curvature shows low standard deviation of the ESC surface temperature distribution than the model with the coolant path of the larger surface area and more geometric change.