These days, printed electronics attract attention from electronics industry. In this paper, the fabrication of the fine patterns by Near Field Electro Spinning (NFES) was studied by using Ag ink on silicon wafer (substrate). Two types of ink, the high viscous ink Ag-200 and low viscous ink Ag-15, were used. The fine and uniform patterns were easily fabricated by using Ag-200 because jet breakup is less occurred in high viscosity solution. As increasing flow rate of solution, aspect ratio of Ag pattern decreased. And there was optimum applied voltage for fine pattern. In case of Ag-200, the optimum applied voltage was about 2.02KV. When pattern was fabricated by NFES, the pattern width and height were affected by many factors such as viscosity, flow rate of solution, applied voltage etc.