In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${mu}mh-1$] with oxygen.