Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{ imes}10^{-2}{Omega}{cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{circ}C$ demonstrates the superior resistivity ($1.237{ imes}10^{-4}{Omega}{cdot}cm$).