As process parameters scale, interconnect width are reduced rapidly while the current flowing through interconnects does not decrease in a proportional manner. This effect increases current density in metal interconnects which may result in poor reliability. Since RMS(root-mean-square) current limits are used to evaluate self-heating and short-time stress failures caused by high-current pluses, RMS current estimation is very important to guarantee the reliability of semiconductor systems. Hence, it is critical to estimate the current limits through interconnects earlier in semiconductor design stages. The purpose of this paper is to propose a fast, yet accurate RMS current estimation technique that can offer a relatively precise estimate by using closed-form equations. The efficiency and accuracy of the proposed method have been verified through simulations using HSPICE for a vast range of interconnect parameters.