In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{ imes}10^{15}-2.93{ imes}10^{17};cm^{-3}$, resistivity in the range of 131.2-2.864 ${Omega}cm$, and mobility in the range of $3.99-31.6;cm^2V^{-1}s^{-1}$ respectively.