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A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology
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  • A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology
  • A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology
저자명
Campos-Roca. Y.,Tessmann. A.,Massler. H.,Leuther. A.
간행물명
ETRI journal
권/호정보
2011년|33권 5호|pp.818-821 (4 pages)
발행정보
한국전자통신연구원
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{circ}$ power divider structure consisting of a Lange coupler followed by a ${lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.