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In-Situ Optical Monitoring of Electrochemical Copper Deposition Process for Semiconductor Interconnection Technology
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  • In-Situ Optical Monitoring of Electrochemical Copper Deposition Process for Semiconductor Interconnection Technology
  • In-Situ Optical Monitoring of Electrochemical Copper Deposition Process for Semiconductor Interconnection Technology
저자명
Hong. Sang-Jeen,Wang. Li,Seo. Dong-Sun,Yoon. Tae-Sik
간행물명
Transactions on electrical and electronic materials
권/호정보
2012년|13권 2호|pp.78-84 (7 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.