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Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire
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  • Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire
  • Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire
저자명
Lee. Kook-Nyung,Lee. Kyoung-Gun,Jung. Suk-Won,Lee. Min-Ho,Seong. Woo-Kyeong
간행물명
Journal of electrical engineering & technology
권/호정보
2012년|7권 3호|pp.396-400 (5 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.