In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.