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A New Z-Source Inverter Topology with High Voltage Boost Ability
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  • A New Z-Source Inverter Topology with High Voltage Boost Ability
  • A New Z-Source Inverter Topology with High Voltage Boost Ability
저자명
Trinh. Quoc-Nam,Lee. Hong-Hee
간행물명
Journal of electrical engineering & technology
권/호정보
2012년|7권 5호|pp.714-723 (10 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

A new Z-source inverter (ZSI) topology is developed to improve voltage boost ability. The proposed topology is modified from the switched inductor topology by adding some more inductors and diodes into inductor branch to the conventional Z-source network. The modulation methods developed for the conventional ZSI can be easily utilized in the proposed ZSI. The proposed ZSI has an ability to obtain a higher voltage boost ratio compared with the conventional ZSI under the same shoot-through duty ratio. Since a smaller shoot-through duty ratio is required for high voltage boost, the proposed ZSI is able to reduce the voltage stress on Z-source capacitor and inverter-bridge. Theoretical analysis and operating principle of the proposed topology are explicitly described. In addition, the design guideline of the proposed Z-source network as well as the PWM control method to achieve the desired voltage boost factor is also analyzed in detail. The improved performances are validated by both simulation and experiment.