Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and positioning. We made graphene oxide based devices by dielectrophoresis, studied and controlled factors which can affect the characteristic of graphene oxide channel. Graphene oxide channel assembled by dielectrophoresis can be constructed differently by various frequency options. We confirmed the change of gate characteristics and I-V characteristics in the range from 80K to 300K temperature.